Invention Grant
- Patent Title: Method for purifying silicon carbide coated structures
- Patent Title (中): 碳化硅涂层结构的净化方法
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Application No.: US11755472Application Date: 2007-05-30
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Publication No.: US07696103B2Publication Date: 2010-04-13
- Inventor: Larry Wayne Shive , Brian Lawrence Gilmore
- Applicant: Larry Wayne Shive , Brian Lawrence Gilmore
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.
Public/Granted literature
- US20070221609A1 METHOD FOR PURIFYING SILICON CARBIDE COATED STRUCTURES Public/Granted day:2007-09-27
Information query
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