Invention Grant
US07696105B2 Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires
有权
用于生产无催化剂的单晶硅纳米线的方法，通过该方法制备的纳米线和包含纳米线的纳米器件
- Patent Title: Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires
- Patent Title (中): 用于生产无催化剂的单晶硅纳米线的方法，通过该方法制备的纳米线和包含纳米线的纳米器件
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Application No.: US12128362Application Date: 2008-05-28
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Publication No.: US07696105B2Publication Date: 2010-04-13
- Inventor: Eun Kyung Lee , Dongmock Whang , Byoung Lyong Choi , Byung Sung Kim
- Applicant: Eun Kyung Lee , Dongmock Whang , Byoung Lyong Choi , Byung Sung Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2007-0129907 20071213
- Main IPC: H01L21/461
- IPC: H01L21/461
Abstract:
Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.
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