Invention Grant
US07696107B2 Nitride film forming method, semiconductor device fabrication method, capacitor fabrication method and nitride film forming apparatus 失效
氮化物膜形成方法,半导体器件制造方法,电容器制造方法和氮化物成膜装置

Nitride film forming method, semiconductor device fabrication method, capacitor fabrication method and nitride film forming apparatus
Abstract:
The nitride film forming method comprises the first step of loading a semiconductor substrate 12 into a reaction furnace, and decompressing the inside of the reaction furnace 14 to remove oxygen and water from the inside of the reaction furnace 14 and the semiconductor substrate 12, the second step of heating the reaction furnace 14 to further remove the oxygen and the water from the reaction furnace 14 and the semiconductor substrate 12, and the third step of purifying nitrogen gas to have the oxygen concentration to be 1 ppb or below, and performing thermal processing with the purified nitrogen gas being fed into the reaction furnace to form a nitride film 56 over the semiconductor substrate 12. The thermal nitriding is performed using an ultrahigh-purity nitrogen gas of an oxygen concentration of 1 ppb or below, whereby nitrogen film of very good quality can be formed without setting the thermal processing temperature very high.
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