Invention Grant
- Patent Title: Method of forming shadow layer on the wafer bevel
- Patent Title (中): 在晶片斜面上形成阴影层的方法
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Application No.: US11953072Application Date: 2007-12-09
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Publication No.: US07696108B2Publication Date: 2010-04-13
- Inventor: Wen-Chieh Wang , Jin-Tau Huang , Wei-Hui Hsu , Tse-Yao Huang
- Applicant: Wen-Chieh Wang , Jin-Tau Huang , Wei-Hui Hsu , Tse-Yao Huang
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Priority: TW96126126 20070718
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469

Abstract:
A method of forming a shadow layer on a wafer bevel region is provided. First, a substrate having the wafer bevel region and a central region is provided. Thereafter, an upper insulator and a lower insulator are provided. The upper insulator is disposed on an upper surface of the substrate and at least covers the central region. The lower insulator is disposed on a lower surface of the substrate and at least covers the central region. A shadow layer is then formed on the upper surface which is not covered by the upper insulator and on the lower surface which is not covered by the lower insulator. Next, the upper insulator and the lower insulator are removed.
Public/Granted literature
- US20090023300A1 METHOD OF FORMING SHADOW LAYER ON THE WAFER BEVEL Public/Granted day:2009-01-22
Information query
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