Invention Grant
US07696117B2 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
有权
减少暴露于含卤素等离子体的表面侵蚀速率的方法和装置
- Patent Title: Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
- Patent Title (中): 减少暴露于含卤素等离子体的表面侵蚀速率的方法和装置
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Application No.: US11796211Application Date: 2007-04-27
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Publication No.: US07696117B2Publication Date: 2010-04-13
- Inventor: Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
- Applicant: Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Shirley L. Church, Esq.
- Main IPC: C04B35/00
- IPC: C04B35/00

Abstract:
A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.
Public/Granted literature
- US20080264565A1 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas Public/Granted day:2008-10-30
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