Crude 1,1-difluoroethane containing at least one compound selected from the group consisting of unsaturated compounds each having two carbon atoms within the molecule and saturated chlorine-containing compounds each having two carbon atoms within the molecule is brought into contact with a zeolite and/or a carbonaceous adsorbent, or crude 1,1-difluoroethane containing hydrogen fluoride and, as impurities, at least one compound selected from the group consisting of unsaturated compounds each having two carbon atoms within the molecule is brought into contact with a fluorination catalyst in a gas phase state. High-purity 1,1-difluoroethane usable as a cryogenic refrigerant, or as an etching gas, can be produced in an industrially advantageous manner.