A memory cell, the memory cell includes first and second electrodes and a memory material element electrically coupling the first and second electrodes. The memory material element comprises a first memory material, such as GST, the first memory material having an electrical property that can be changed by the application of energy. A thermal insulating layer surrounds the memory material element. The thermal insulating layer comprises a second memory material. A dielectric layer separates the thermal insulating material from the memory material element. A method for making a thermally insulated memory cell device is also disclosed.