Invention Grant
- Patent Title: Solid-state image sensing device and manufacturing method thereof
- Patent Title (中): 固态摄像装置及其制造方法
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Application No.: US11700000Application Date: 2007-01-31
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Publication No.: US07696544B2Publication Date: 2010-04-13
- Inventor: Makoto Misaki , Masafumi Tsutsui
- Applicant: Makoto Misaki , Masafumi Tsutsui
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-146879 20060526
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
Pixel portions each of which has a charge storage portion formed in a semiconductor substrate 11 and a transfer gate for transferring charges stored in the charge storage portion are isolated from each other by a device isolation region in the semiconductor substrate. A buried gate electrically connected to the transfer gate is embedded in the device isolation region. The buried gate includes a gate dielectric film and gate electrode formed in a trench of the semiconductor substrate.
Public/Granted literature
- US20070272958A1 Solid-state image sensing device and manufacturing method thereof Public/Granted day:2007-11-29
Information query
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