Invention Grant
- Patent Title: Bipolar switching PCMO capacitor
- Patent Title (中): 双极开关PCMO电容
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Application No.: US11805177Application Date: 2007-05-22
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Publication No.: US07696550B2Publication Date: 2010-04-13
- Inventor: Tingkai Li , Lawrence J. Charneski , Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
- Applicant: Tingkai Li , Lawrence J. Charneski , Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
- Applicant Address: US WA Carmas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Carmas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A multi-layer PrxCa1-xMnO3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and, forming top electrode overlying the PCMO film. If the polycrystalline layers are deposited overlying the nanocrystalline layers, a high resistance can be written with narrow pulse width, negative voltage pulses. The PCMO film can be reset to a low resistance using a narrow pulse width, positive amplitude pulse. Likewise, if the nanocrystalline layers are deposited overlying the polycrystalline layers, a high resistance can be written with narrow pulse width, positive voltage pulses, and reset to a low resistance using a narrow pulse width, negative amplitude pulse.
Public/Granted literature
- US20070221975A1 Bipolar switching PCMO capacitor Public/Granted day:2007-09-27
Information query
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