Invention Grant
US07696557B2 Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
失效
非接触均匀隧道分离p-well（CUSP）非易失性存储器阵列架构，制造和操作
- Patent Title: Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation
- Patent Title (中): 非接触均匀隧道分离p-well（CUSP）非易失性存储器阵列架构，制造和操作
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Application No.: US11706587Application Date: 2007-02-15
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Publication No.: US07696557B2Publication Date: 2010-04-13
- Inventor: Chun Chen , Andrei Mihnea , Kirk Prall
- Applicant: Chun Chen , Andrei Mihnea , Kirk Prall
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
Floating-gate field-effect transistors or memory cells formed in isolated wells are useful in the fabrication of non-volatile memory arrays and devices. A column of such floating-gate memory cells are associated with a well containing the source/drain regions for each memory cell in the column. These wells are isolated from source/drain regions of other columns of the array. Fowler-Nordheim tunneling can be used to program and erase such floating-gate memory cells either on an individual basis or on a bulk or block basis.
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