Invention Grant
- Patent Title: Flash memory device
- Patent Title (中): 闪存设备
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Application No.: US11945206Application Date: 2007-11-26
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Publication No.: US07696560B2Publication Date: 2010-04-13
- Inventor: Ki Seog Kim
- Applicant: Ki Seog Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2005-0039859 20050512
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A flash memory device includes control gates that are formed to completely surround the top and sides of floating gates. The control gates are located between the floating gates that are adjacent in the word line direction as well as the floating gates that are adjacent in the bit line direction. The present flash memory device reduces a shift in a threshold voltage resulting from interference among floating gates and increases an overlapping area of the floating gate and the control gates. Thus, there is an effect in that the coupling ratio can be increased.
Public/Granted literature
- US20090173988A1 FLASH MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-07-09
Information query
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