Invention Grant
- Patent Title: Trench MOSFET
- Patent Title (中): 沟槽MOSFET
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Application No.: US10580619Application Date: 2004-11-26
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Publication No.: US07696599B2Publication Date: 2010-04-13
- Inventor: Raymond J. E. Hueting , Erwin A. Hijzen
- Applicant: Raymond J. E. Hueting , Erwin A. Hijzen
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: GB0327793.6 20031129
- International Application: PCT/IB2004/052563 WO 20041126
- International Announcement: WO2005/053033 WO 20050609
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L21/336
Abstract:
A trench MOSFET with drain (8), drift region (10) body (12) and source (14). In order to improve the figure of merit for use of the MOSFET as control and sync FETs, the trench (20) is partially filled with dielectric (24) adjacent to the drift region (10) and a graded doping profile is used in the drift region (10).
Public/Granted literature
- US20070108515A1 Trench mosfet Public/Granted day:2007-05-17
Information query
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