Invention Grant
US07696602B2 Integrated circuit devices having fuse structures including buffer layers
失效
具有包括缓冲层的熔丝结构的集成电路器件
- Patent Title: Integrated circuit devices having fuse structures including buffer layers
- Patent Title (中): 具有包括缓冲层的熔丝结构的集成电路器件
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Application No.: US11699783Application Date: 2007-01-30
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Publication No.: US07696602B2Publication Date: 2010-04-13
- Inventor: Hyun-Chul Kim
- Applicant: Hyun-Chul Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR2002-68933 20021107
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
An integrated circuit device is provided including an integrated circuit substrate having a fuse region. A window layer is provided on the integrated circuit substrate that defines a fuse region. The window layer is positioned at an upper portion of the integrated circuit device and recessed beneath a surface of the integrated circuit device. A buffer pattern is provided between the integrated circuit substrate and the window layer and a fuse pattern is provided between the buffer pattern and the window layer. Methods of forming integrated circuit devices are also described.
Public/Granted literature
- US20070126029A1 Integrated circuit devices having fuse structures including buffer layers Public/Granted day:2007-06-07
Information query
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