Invention Grant
- Patent Title: Semiconductor component comprising a temporary field stopping area, and method for the production thereof
- Patent Title (中): 包括临时场停止区域的半导体部件及其制造方法
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Application No.: US10587413Application Date: 2005-01-24
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Publication No.: US07696605B2Publication Date: 2010-04-13
- Inventor: Hans-Joachim Schulze , Josef Lutz
- Applicant: Hans-Joachim Schulze , Josef Lutz
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Maginot, Moore & Beck
- Priority: DE102004004045 20040127
- International Application: PCT/DE2005/000093 WO 20050124
- International Announcement: WO2005/071757 WO 20050804
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
The invention relates to a semiconductor component comprising a buried temporarily n-doped area (9), which is effective only in the event of turn-off from the conducting to the blocking state of the semiconductor component and prevents chopping of the tail current in order thus to improve the turn-off softness. Said temporarily effective area is created by implantation of K centers (10).
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