Invention Grant
- Patent Title: Semiconductor integrated circuit device and process for manufacturing the same
- Patent Title (中): 半导体集成电路器件及其制造方法
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Application No.: US11948626Application Date: 2007-11-30
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Publication No.: US07696608B2Publication Date: 2010-04-13
- Inventor: Hiroyuki Uchiyama , Hiraku Chakihara , Teruhisa Ichise , Michimoto Kaminaga
- Applicant: Hiroyuki Uchiyama , Hiraku Chakihara , Teruhisa Ichise , Michimoto Kaminaga
- Applicant Address: JP JP
- Assignee: Hitachi ULSI Systems Co., Ltd.,Renesas Technology Corp.
- Current Assignee: Hitachi ULSI Systems Co., Ltd.,Renesas Technology Corp.
- Current Assignee Address: JP JP
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP11-345429 19991203
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
A semiconductor IC includes grooves formed in a substrate to define a first dummy region and second dummy regions formed at a scribing area, and third dummy regions and a fourth dummy region formed at a product area. A width of the first dummy region is greater than widths of each of the second and third dummy regions and a width of the fourth dummy region is greater than widths of each of the third dummy regions. A conductor pattern is formed over the first dummy region for optical pattern recognition. The first dummy region is formed under the conductor pattern so the grooves are not formed under the conductor pattern. The second dummy regions are spaced from one another by a predetermined spacing at the scribing area, and the third dummy regions are spaced from one another by a predetermined spacing at the product area.
Public/Granted literature
- US20080283970A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR MANUFACTURING THE SAME Public/Granted day:2008-11-20
Information query
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