Invention Grant
US07696627B2 Multilayered interconnect structure and method for fabricating the same 失效
多层互连结构及其制造方法

  • Patent Title: Multilayered interconnect structure and method for fabricating the same
  • Patent Title (中): 多层互连结构及其制造方法
  • Application No.: US11665474
    Application Date: 2006-03-30
  • Publication No.: US07696627B2
    Publication Date: 2010-04-13
  • Inventor: Nobuo Aoi
  • Applicant: Nobuo Aoi
  • Applicant Address: JP Osaka
  • Assignee: Panasonic Corporation
  • Current Assignee: Panasonic Corporation
  • Current Assignee Address: JP Osaka
  • Agency: McDermott Will & Emery LLP
  • Priority: JP2005-198302 20050707
  • International Application: PCT/JP2006/306637 WO 20060330
  • International Announcement: WO2007/007447 WO 20070118
  • Main IPC: H01L29/40
  • IPC: H01L29/40
Multilayered interconnect structure and method for fabricating the same
Abstract:
In the multilayered interconnect structure, an upper-layer interconnect is formed in an interlayer dielectric film formed on a lower-layer interconnect of copper, and the lower-layer interconnect and the upper-layer interconnect of copper are connected to each other through a via formed in the interlayer dielectric film. A layer of the interlayer dielectric film in contact with the lower-layer interconnect is made of a layer including, as a principal component, an aromatic compound containing a nitrogen atom having a lone pair of electrons in an aromatic ring.
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