Invention Grant
- Patent Title: Multilayered interconnect structure and method for fabricating the same
- Patent Title (中): 多层互连结构及其制造方法
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Application No.: US11665474Application Date: 2006-03-30
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Publication No.: US07696627B2Publication Date: 2010-04-13
- Inventor: Nobuo Aoi
- Applicant: Nobuo Aoi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-198302 20050707
- International Application: PCT/JP2006/306637 WO 20060330
- International Announcement: WO2007/007447 WO 20070118
- Main IPC: H01L29/40
- IPC: H01L29/40

Abstract:
In the multilayered interconnect structure, an upper-layer interconnect is formed in an interlayer dielectric film formed on a lower-layer interconnect of copper, and the lower-layer interconnect and the upper-layer interconnect of copper are connected to each other through a via formed in the interlayer dielectric film. A layer of the interlayer dielectric film in contact with the lower-layer interconnect is made of a layer including, as a principal component, an aromatic compound containing a nitrogen atom having a lone pair of electrons in an aromatic ring.
Public/Granted literature
- US20080150151A1 Multilayered Interconnect Structure and Method for Fabricating the Same Public/Granted day:2008-06-26
Information query
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