Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US11994526Application Date: 2006-06-20
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Publication No.: US07696707B2Publication Date: 2010-04-13
- Inventor: Daiki Yanagishima
- Applicant: Daiki Yanagishima
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Fish & Richardson P.C.
- Priority: JP2005-194693 20050704
- International Application: PCT/JP2006/312330 WO 20060620
- International Announcement: WO2007/004418 WO 20070111
- Main IPC: H02H7/09
- IPC: H02H7/09

Abstract:
In a semiconductor integrated circuit device of the invention, a plurality of external terminals include: a first external terminal (VCC, U, V and W terminals in the FIGURE) receiving a higher voltage than the other external terminals; and a second external terminal (FG terminal in the FIGURE) arranged adjacent to the first external terminal as one of the other external terminals, the second external terminal feeding out, from one end of a transistor Q1, a control pulse signal corresponding to the turning on and off of the transistor Q1, and the second external terminal is connected to an overvoltage protection circuit (consisting of R1, R2, Q2 and AND) that masks a control signal for turning on and off the transistor Q1 so that, when a voltage at the second external terminal reaches a predetermined threshold, the transistor Q1 is kept off all the time. In this way, it is possible to prevent, without the need for an extra external terminal, breakdown in case of a short circuit between adjacent external terminals.
Public/Granted literature
- US20090079377A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2009-03-26
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