Invention Grant
US07697313B2 Integrated circuit, memory cell, memory module, method of operating an integrated circuit, and method of manufacturing a memory cell
有权
集成电路，存储单元，存储器模块，集成电路的操作方法以及制造存储单元的方法
- Patent Title: Integrated circuit, memory cell, memory module, method of operating an integrated circuit, and method of manufacturing a memory cell
- Patent Title (中): 集成电路，存储单元，存储器模块，集成电路的操作方法以及制造存储单元的方法
-
Application No.: US11873289Application Date: 2007-10-16
-
Publication No.: US07697313B2Publication Date: 2010-04-13
- Inventor: Ulrich Klostermann
- Applicant: Ulrich Klostermann
- Applicant Address: DE Munich FR Corbeil Essonnes Cedex
- Assignee: Qimonda AG,ALTIS Semiconductor, SNC
- Current Assignee: Qimonda AG,ALTIS Semiconductor, SNC
- Current Assignee Address: DE Munich FR Corbeil Essonnes Cedex
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C5/06
- IPC: G11C5/06
Abstract:
According to one embodiment, an integrated circuit includes an arrangement of memory cells. Each memory cell is connected to a programming current path used for programming the memory cell, and a sensing current path used for sensing the memory state of the memory cell. The programming current path and the sensing current path are at least partly separated from each other.
Public/Granted literature
Information query
