A nonvolatile semiconductor storage device is provided with a memory cell selecting circuit which selects a selected memory cell from a memory cell array; and a write voltage applying circuit, which applies a row write voltage and a column write voltage to a selected word line and a selected bit line, respectively, and applies a row write blocking voltage and a column write blocking voltage to an unselected word line and an unselected bit line, respectively, and applies a write voltage sufficient for writing only on both ends of the selected memory cell. The write voltage applying circuit applies a write compensating voltage, which has a polarity opposite to that of the voltage applied on the both ends of the unselected memory cells other than the selected memory cell, on both ends of the unselected memory cells, while the write voltage is applied to the selected memory cell.