Invention Grant
US07697330B1 Non-volatile memory array having drain-side segmentation for an FPGA device
有权
具有用于FPGA器件的漏极侧分割的非易失性存储器阵列
- Patent Title: Non-volatile memory array having drain-side segmentation for an FPGA device
- Patent Title (中): 具有用于FPGA器件的漏极侧分割的非易失性存储器阵列
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Application No.: US11961203Application Date: 2007-12-20
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Publication No.: US07697330B1Publication Date: 2010-04-13
- Inventor: Vidyahara Bellippady , Santosh Yachareni , Fethi Dhaoui , Zhigang Wang
- Applicant: Vidyahara Bellippady , Santosh Yachareni , Fethi Dhaoui , Zhigang Wang
- Applicant Address: US CA Mountain View
- Assignee: Actel Corporation
- Current Assignee: Actel Corporation
- Current Assignee Address: US CA Mountain View
- Agency: Lewis and Roca LLP
- Main IPC: G11C16/00
- IPC: G11C16/00

Abstract:
A non-volatile memory array for an FPGA comprises a plurality of memory cells arranged in rows and columns and divided into a plurality of row segments. The source of each non-volatile memory transistor in each segment is coupled together to a common source line. A column segment line is associated with each segment of the array, and is coupled to the drains of each non-volatile memory transistor in the segment. A segment select transistor is coupled between each column segment line and its associated column line, and a high-voltage driver transistor is coupled to each column line.
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