Invention Grant
US07697330B1 Non-volatile memory array having drain-side segmentation for an FPGA device 有权
具有用于FPGA器件的漏极侧分割的非易失性存储器阵列

Non-volatile memory array having drain-side segmentation for an FPGA device
Abstract:
A non-volatile memory array for an FPGA comprises a plurality of memory cells arranged in rows and columns and divided into a plurality of row segments. The source of each non-volatile memory transistor in each segment is coupled together to a common source line. A column segment line is associated with each segment of the array, and is coupled to the drains of each non-volatile memory transistor in the segment. A segment select transistor is coupled between each column segment line and its associated column line, and a high-voltage driver transistor is coupled to each column line.
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