Invention Grant
US07697339B2 Sense amplifier overdriving circuit and semiconductor device using the same
有权
感应放大器过驱动电路和使用其的半导体器件
- Patent Title: Sense amplifier overdriving circuit and semiconductor device using the same
- Patent Title (中): 感应放大器过驱动电路和使用其的半导体器件
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Application No.: US12189253Application Date: 2008-08-11
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Publication No.: US07697339B2Publication Date: 2010-04-13
- Inventor: Sung Soo Xi
- Applicant: Sung Soo Xi
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Main IPC: G11C11/03
- IPC: G11C11/03

Abstract:
A sense amplifier overdriving circuit includes a first voltage driver which supplies an internal voltage from an internal voltage terminal to a sense amplifier in response to a first enabling signal, a logic unit which logically operates a block select signal for selection of a cell block and a second enabling signal enabled for a predetermined time after enabling of the first enabling signal, and outputs the resultant signal, and a second voltage driver which supplies an external voltage to the internal voltage terminal in response to the signal output from the logic unit.
Public/Granted literature
- US20080298151A1 Sense Amplifier Overdriving Circuit and Semiconductor Device Using the Same Public/Granted day:2008-12-04
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