Invention Grant
- Patent Title: Flash memory device and related high voltage generating circuit
- Patent Title (中): 闪存器件及相关高压发生电路
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Application No.: US11797989Application Date: 2007-05-09
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Publication No.: US07697342B2Publication Date: 2010-04-13
- Inventor: Dae-Seok Byeon , Hee-Won Lee
- Applicant: Dae-Seok Byeon , Hee-Won Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0043882 20060516
- Main IPC: G11C11/03
- IPC: G11C11/03
Abstract:
In a flash memory device, a high voltage generating circuit generates a high voltage and receives the high voltage as a switching voltage for controlling a voltage dividing circuit.
Public/Granted literature
- US20070268751A1 Flash memory device and related high voltage generating circuit Public/Granted day:2007-11-22
Information query
