Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12366357Application Date: 2009-02-05
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Publication No.: US07697348B2Publication Date: 2010-04-13
- Inventor: Ho-Youb Cho
- Applicant: Ho-Youb Cho
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR2006-0083737 20060831
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A first input buffer receives sequentially inputted first data. A first data selector selectively transfers the first data from the first input buffer in accordance with a data input mode. A first data alignment circuit aligns and outputs the data from the first data selector. A second input buffer receives sequentially inputted second data in accordance with the data input mode. A second data selector selectively transfers the data of the first input buffer or of the second input buffer, in accordance with the data input mode. A first data alignment circuit aligns and outputs the data from the second data selector.
Public/Granted literature
- US20090147597A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-06-11
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