Invention Grant
- Patent Title: Memory architecture having multiple partial wordline drivers and contacted and feed-through bitlines
- Patent Title (中): 内存架构具有多个部分字线驱动程序和联系和直通位线
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Application No.: US11291219Application Date: 2005-12-01
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Publication No.: US07697364B2Publication Date: 2010-04-13
- Inventor: Raymond Jit-Hung Sung , Dongwook Suh , Daniel Rodriguez
- Applicant: Raymond Jit-Hung Sung , Dongwook Suh , Daniel Rodriguez
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Brake Hughes Bellermann LLP
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
Various embodiments are disclosed relating to a memory circuit architecture. In an example embodiment, which may accommodate a change to a new memory size or cell aspect ratio, while migrating between different process nodes or the same process generation, while retaining at least a portion of the periphery circuitry, a memory circuit architecture may be employed in which the memory array is divided into an upper half and a lower half, thereby splitting the cache Ways among the two halves. The wordline may be split among the two array halves, with each half driven by a half wordline driver. Also, in another embodiment, two sets of bitlines may be provided for each column, including a contacted set of bitlines and a feed-through set of bitlines.
Public/Granted literature
- US20070127306A1 Memory architecture having multiple partial wordline drivers and contacted and feed-through bitlines Public/Granted day:2007-06-07
Information query