Invention Grant
US07697368B2 Semiconductor memory device and method of inputting addresses therein
失效
半导体存储器件及其中输入地址的方法
- Patent Title: Semiconductor memory device and method of inputting addresses therein
- Patent Title (中): 半导体存储器件及其中输入地址的方法
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Application No.: US11967577Application Date: 2007-12-31
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Publication No.: US07697368B2Publication Date: 2010-04-13
- Inventor: Khil-Ohk Kang
- Applicant: Khil-Ohk Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP&T Law Firm PLC
- Priority: KR10-2007-0063539 19200627
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A semiconductor memory device is capable of reducing a test time by sharing input pins of addresses for the test, thereby reducing test costs also. The semiconductor memory device includes first and second address buffer units. The first address buffer unit is configured to transmit a plurality of normal addresses to an internal circuit and store one or more of the received normal addresses. The second address buffer unit is configured to transmit one or more external bank addresses to the internal circuit as internal bank addresses in a normal mode and transmit addresses stored in the first address buffer unit to the internal circuit as the internal bank addresses in a test mode.
Public/Granted literature
- US20090003100A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF INPUTTING ADDRESSES THEREIN Public/Granted day:2009-01-01
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