Invention Grant
- Patent Title: Surface-emitting laser
- Patent Title (中): 表面发射激光
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Application No.: US12166225Application Date: 2008-07-01
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Publication No.: US07697586B2Publication Date: 2010-04-13
- Inventor: Mitsuhiro Ikuta
- Applicant: Mitsuhiro Ikuta
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-198485 20070731
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/08

Abstract:
Provided is a high-output surface-emitting laser capable of reducing effects on reflectance of an upper reflection mirror in a single transverse mode. The surface-emitting laser includes plural semiconductor layers, laminated on a substrate, which includes a lower semiconductor multilayer reflection mirror, an active layer, and an upper semiconductor multilayer reflection mirror, wherein the lower or upper semiconductor multilayer reflection mirror includes a first semiconductor layer having a two-dimensional photonic crystal structure comprised of a high and low refractive index portions which are arranged in a direction parallel to the substrate, and wherein a second semiconductor layer laminated on the first semiconductor layer includes a microhole which reaches the low refractive index portion, the cross section of the microhole in the direction parallel to the substrate being smaller than the cross section of the low refractive index portion formed in the first semiconductor layer.
Public/Granted literature
- US20090034572A1 SURFACE-EMITTING LASER Public/Granted day:2009-02-05
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