Invention Grant
US07700413B2 Production method of compound semiconductor light-emitting device wafer
有权
化合物半导体发光元件晶片的制造方法
- Patent Title: Production method of compound semiconductor light-emitting device wafer
- Patent Title (中): 化合物半导体发光元件晶片的制造方法
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Application No.: US11578794Application Date: 2005-04-19
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Publication No.: US07700413B2Publication Date: 2010-04-20
- Inventor: Katsuki Kusunoki
- Applicant: Katsuki Kusunoki
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2004-124165 20040420
- International Application: PCT/JP2005/007759 WO 20050419
- International Announcement: WO2005/104250 WO 20051103
- Main IPC: H01L21/78
- IPC: H01L21/78
Abstract:
The inventive production method of a compound semiconductor light-emitting device (LED)s wafer comprises a step of forming a protective film on the top and/or bottom surface of a compound semiconductor LEDs wafer, where the devices being regularly and periodically arranged with separation zones being disposed; a step of forming separation grooves by means of laser processing in the separation zones of the surface on which the protective film is formed, while a gas is blown onto a laser-irradiated portion; and a step of removing at least a portion of the protective film, which steps are performed in the above sequence.
Public/Granted literature
- US20070173036A1 Production method of compound semiconductor light-emitting device wafer Public/Granted day:2007-07-26
Information query
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