Invention Grant
- Patent Title: Methods of forming memory arrays for increased bit density
- Patent Title (中): 形成存储器阵列以增加位密度的方法
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Application No.: US11585795Application Date: 2006-10-25
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Publication No.: US07700422B2Publication Date: 2010-04-20
- Inventor: Jon Daley
- Applicant: Jon Daley
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A memory array having a plurality of resistance variable memory units and method for forming the same are provided. Each memory unit includes a first electrode, a resistance variable material over the first electrode, and a first second-electrode over the resistance variable material. The first second-electrode is associated with the first electrode to define a first memory element. Each memory unit further includes a second second-electrode over the resistance variable material. The second-second electrode is associated with the first electrode to define a second memory element.
Public/Granted literature
- US20070040160A1 Memory array for increased bit density and method of forming the same Public/Granted day:2007-02-22
Information query
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