Invention Grant
- Patent Title: Device including a semiconductor chip having a plurality of electrodes
- Patent Title (中): 装置包括具有多个电极的半导体芯片
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Application No.: US11925281Application Date: 2007-10-26
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Publication No.: US07701065B2Publication Date: 2010-04-20
- Inventor: Ralf Otremba , Xaver Schloegel , Klaus Schiess , Tien Lai Tan
- Applicant: Ralf Otremba , Xaver Schloegel , Klaus Schiess , Tien Lai Tan
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/41
- IPC: H01L29/41

Abstract:
A device, including a semiconductor chip having a plurality of first electrodes is disclosed. A plurality of second electrodes is arranged on a first surface of the semiconductor chip. A first electrically conductive layer is applied over a first section of the first surface and electrically coupled to the first electrodes arranged within the first section. A second electrically conductive layer is applied over the first electrically conductive layer and electrically coupled to the second electrodes arranged within the first section.
Public/Granted literature
- US20090108460A1 DEVICE INCLUDING A SEMICONDUCTOR CHIP HAVING A PLURALITY OF ELECTRODES Public/Granted day:2009-04-30
Information query
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