Invention Grant
US07701629B2 Photonic device including semiconductor structure having doped region with array of subwavelengh recesses
有权
光子器件包括具有掺杂区域的半导体结构,具有亚波长凹陷阵列
- Patent Title: Photonic device including semiconductor structure having doped region with array of subwavelengh recesses
- Patent Title (中): 光子器件包括具有掺杂区域的半导体结构,具有亚波长凹陷阵列
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Application No.: US11788445Application Date: 2007-04-19
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Publication No.: US07701629B2Publication Date: 2010-04-20
- Inventor: Shih-Yuan Wang , Alexandre M. Bratkovski
- Applicant: Shih-Yuan Wang , Alexandre M. Bratkovski
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G02B1/03
- IPC: G02B1/03

Abstract:
Various aspects of the present invention are directed to photonic devices, such as electro-optic modulators, passive filters, and tunable filters. In one aspect of the present invention, a photonic device includes a semiconductor structure having a p-region and an n-region. A doped region is formed on or within the semiconductor structure. The doped region includes at least one generally periodic array of recesses, with the at least one generally periodic array configured to transmit electromagnetic radiation at a selected dominant wavelength. The selected dominant wavelength is tunable by varying the refractive index of the semiconductor structure.
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