Invention Grant
US07701760B2 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
有权
具有溅射金属硫族化物区域的电阻可变存储器件及其制造方法
- Patent Title: Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
- Patent Title (中): 具有溅射金属硫族化物区域的电阻可变存储器件及其制造方法
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Application No.: US12232232Application Date: 2008-09-12
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Publication No.: US07701760B2Publication Date: 2010-04-20
- Inventor: Kristy A. Campbell , Jon Daley , Joseph F. Brooks
- Applicant: Kristy A. Campbell , Jon Daley , Joseph F. Brooks
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.
Public/Granted literature
- US20090078925A1 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication Public/Granted day:2009-03-26
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