Invention Grant
- Patent Title: Flash memory device and program method thereof
- Patent Title (中): 闪存装置及其编程方法
-
Application No.: US11856699Application Date: 2007-09-17
-
Publication No.: US07701770B2Publication Date: 2010-04-20
- Inventor: Hee Youl Lee
- Applicant: Hee Youl Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2006-0096007 20060929; KR10-2007-0063576 20070627
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method of programming a flash memory device including performing a first program for programming cells to a first state and a second state higher than the first state, and performing a second program simultaneously together with the first program, for programming cells to the second state and a third state higher than the second state.
Public/Granted literature
- US20080080250A1 FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF Public/Granted day:2008-04-03
Information query
