Invention Grant
- Patent Title: Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator
- Patent Title (中): 半导体器件制造系统以及使用实时仿真器计算氧化膜厚度的半导体器件的制造方法
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Application No.: US10935430Application Date: 2004-09-08
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Publication No.: US07702413B2Publication Date: 2010-04-20
- Inventor: Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
- Applicant: Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2003-355684 20030908; JPP2004-189971 20040628
- Main IPC: G06F19/00
- IPC: G06F19/00
Abstract:
The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a semiconductor substrate and a thin film on a surface thereof; a self-diagnostic system for diagnosing a state of the processing apparatus; and a parameter fitting apparatus for maintaining a parameter of the self-diagnostic system when an inspection result of the semiconductor substrate having undergone the process has been determined to be correct, and for changing the parameter of the self-diagnostic system when the inspection result has been determined to be incorrect.
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