Invention Grant
- Patent Title: Range pattern definition of susceptibility of layout regions to fabrication issues
- Patent Title (中): 范围模式定义布局区域对制造问题的敏感性
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Application No.: US11394466Application Date: 2006-03-31
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Publication No.: US07703067B2Publication Date: 2010-04-20
- Inventor: Subarnarekha Sinha , Charles C. Chiang
- Applicant: Subarnarekha Sinha , Charles C. Chiang
- Applicant Address: US CA Mountain View
- Assignee: SYNOPSYS, Inc.
- Current Assignee: SYNOPSYS, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Silicon Valley Patent Group LLP
- Agent Omkar Suryadevara
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A memory is encoded with a data structure that represents a pattern having a range for one or more dimensions and/or positions of line segments therein. The data structure identifies two or more line segments that are located at a boundary of the pattern. The data structure also includes at least one set of values that identify a maximum limit and a minimum limit (i.e. the range) between which relative location and/or dimension of an additional line segment of the pattern in a portion of a layout of an integrated circuit (IC) chip, represents a defect in the IC chip when fabricated. In most embodiments, multiple ranges are specified in such a range defining pattern for example a width range is specified for the width of a trace of material in the layout and a spacing range is specified for the separation distance between two adjacent traces in the layout.
Public/Granted literature
- US20070240086A1 Range pattern definition of susceptibility of layout regions to fabrication issues Public/Granted day:2007-10-11
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