Invention Grant
- Patent Title: Methods for fabricating field emission display devices
- Patent Title (中): 制造场致发射显示装置的方法
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Application No.: US11775142Application Date: 2007-07-09
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Publication No.: US07704116B2Publication Date: 2010-04-27
- Inventor: Yau-Chen Jiang , Ming-Chun Hsiao , Ying-Hsien Chen , Kuang-Chung Chen
- Applicant: Yau-Chen Jiang , Ming-Chun Hsiao , Ying-Hsien Chen , Kuang-Chung Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Quintero Law Office
- Priority: TW95125783A 20060714
- Main IPC: H01J17/49
- IPC: H01J17/49 ; H01J9/38
Abstract:
Methods for fabricating field emission display devices. A first substrate is provided. A cathode structure is formed on the first substrate. A surface treatment procedure is performed on the first substrate with cathode structure thereon. A second substrate opposing the first substrate is provided and assembled in vacuum with a wall rib therebetween. The surface treatment procedure includes free radical oxidization and a supercritical CO2 fluid cleaning.
Public/Granted literature
- US20080014821A1 METHODS FOR FABRICATING FIELD EMISSION DISPLAY DEVICES Public/Granted day:2008-01-17
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