Invention Grant
- Patent Title: High temperature anneal with improved substrate support
- Patent Title (中): 具有改进的基板支撑的高温退火
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Application No.: US10261391Application Date: 2002-09-30
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Publication No.: US07704327B2Publication Date: 2010-04-27
- Inventor: Ann P. Waldhauer , Juan M. Chacin , Brian H. Burrows
- Applicant: Ann P. Waldhauer , Juan M. Chacin , Brian H. Burrows
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C23F1/00 ; H01L21/306 ; F27B5/14 ; C23C16/06 ; C23C16/22
Abstract:
A method including removing an impurity from a gas stream to a processing chamber at a point of use. An apparatus with a point of use purifier on a gas stream. An apparatus including a shelf having dimensions suitable for placement within a thermal processing including a body of a material that renders the body opaque to radiation frequency range used for a temperature measurement of a substrate in a thermal processing chamber.
Public/Granted literature
- US20040060512A1 High temperature anneal with improved substrate support Public/Granted day:2004-04-01
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