Invention Grant
US07704763B2 Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
有权
高效率的III族氮化物基发光二极管通过在N面表面上制造结构
- Patent Title: Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
- Patent Title (中): 高效率的III族氮化物基发光二极管通过在N面表面上制造结构
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Application No.: US10581940Application Date: 2003-12-09
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Publication No.: US07704763B2Publication Date: 2010-04-27
- Inventor: Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
- Applicant: Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
- Applicant Address: US CA Oakland JP Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Saitama Prefecture
- Agency: Gates & Cooper LLP
- International Application: PCT/US03/39211 WO 20031209
- International Announcement: WO2005/064666 WO 20050714
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
Public/Granted literature
- US20070121690A1 Highly efficient gallium nitride based light emitting diodes via surface roughening Public/Granted day:2007-05-31
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