Invention Grant
US07704784B2 Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
有权
具有诱导高导电性和低导电性的区域的半导体器件及其制造方法
- Patent Title: Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
- Patent Title (中): 具有诱导高导电性和低导电性的区域的半导体器件及其制造方法
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Application No.: US11354365Application Date: 2006-02-15
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Publication No.: US07704784B2Publication Date: 2010-04-27
- Inventor: Zhenan Bao , Howard Edan Katz , Jeffrey Scott Meth
- Applicant: Zhenan Bao , Howard Edan Katz , Jeffrey Scott Meth
- Applicant Address: US NJ Murray Hill US DE Wilmington
- Assignee: Lucent Technologies, Inc.,E.I. du Pont de Nemours and Company
- Current Assignee: Lucent Technologies, Inc.,E.I. du Pont de Nemours and Company
- Current Assignee Address: US NJ Murray Hill US DE Wilmington
- Agent Jay M. Brown
- Main IPC: H01L51/40
- IPC: H01L51/40
Abstract:
Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.
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