Invention Grant
US07704785B2 Organic semiconductor solutions, processes for forming organic semiconductor layers therewith and devices containing such layers
有权
有机半导体解决方案，其中形成有机半导体层的工艺和包含这些层的器件
- Patent Title: Organic semiconductor solutions, processes for forming organic semiconductor layers therewith and devices containing such layers
- Patent Title (中): 有机半导体解决方案，其中形成有机半导体层的工艺和包含这些层的器件
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Application No.: US11596304Application Date: 2005-05-10
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Publication No.: US07704785B2Publication Date: 2010-04-27
- Inventor: Jürgen Steiger , Hubert Spreitzer
- Applicant: Jürgen Steiger , Hubert Spreitzer
- Applicant Address: DE Darmstadt
- Assignee: Merck Patent GmbH
- Current Assignee: Merck Patent GmbH
- Current Assignee Address: DE Darmstadt
- Agency: Connolly Bove Lodge & Hutz LLP
- Priority: DE102004023276 20040511
- International Application: PCT/EP2005/005022 WO 20050510
- International Announcement: WO2005/112145 WO 20051124
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L21/00 ; H01L21/44 ; H01L35/24 ; H01B1/00 ; C08K5/01 ; C08G73/12 ; C09K11/06 ; C09D11/00 ; B05D1/06 ; B05D1/32
Abstract:
Solutions comprising: (i) at least one organic semiconductor, (ii) at least one organic solvent A having a boiling point, and (iii) at least one organic solvent B having a boiling point; wherein the at least one organic semiconductor comprises at least one high molecular weight component, wherein the at least one organic solvent A is a good solvent for the at least one organic semiconductor, wherein the at least one organic solvent B is a poor solvent for the at least one organic semiconductor; and wherein the boiling point of the at least one solvent A is greater than the boiling point of the at least one solvent B; and the use of such solutions in processes for forming organic semiconductor layers on substrates and devices formed by such processes.
Public/Granted literature
- US20080265214A1 Solutions of Organic Semiconductors Public/Granted day:2008-10-30
Information query
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