Invention Grant
- Patent Title: Methods for fabricating phase changeable memory devices
- Patent Title (中): 制造相变存储器件的方法
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Application No.: US11466302Application Date: 2006-08-22
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Publication No.: US07704787B2Publication Date: 2010-04-27
- Inventor: Horii Hideki , Jeong-hee Park
- Applicant: Horii Hideki , Jeong-hee Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2003-0011416 20030224
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that includes nitrogen atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystalline structure.
Public/Granted literature
- US20060281217A1 Methods For Fabricating Phase Changeable Memory Devices Public/Granted day:2006-12-14
Information query
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