Invention Grant
- Patent Title: Method of forming a semiconductor device
- Patent Title (中): 形成半导体器件的方法
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Application No.: US11599223Application Date: 2006-11-13
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Publication No.: US07704794B2Publication Date: 2010-04-27
- Inventor: Leonard E. Mess , Jerry M. Brooks , David J. Corisis
- Applicant: Leonard E. Mess , Jerry M. Brooks , David J. Corisis
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor device is formed of two or more dice of similar dimensions and bond pad arrangement, in which bond pads are located in fields along less than three edges of the active surface of each die. A first die is attached to a substrate and subsequent die or dice are attached in a vertical sequence atop the first die, each in an offset configuration from the next lower die to expose the bond pads thereof for conductive bonding to metallization of the substrate. The multiple chip device permits a plurality of dice to be stacked in a maximum density low profile device. A particularly useful application is the formation of stacked mass storage flash memory package.
Public/Granted literature
- US20070065987A1 Stacked mass storage flash memory package Public/Granted day:2007-03-22
Information query
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