Invention Grant
- Patent Title: Sub-lithographics opening for back contact or back gate
- Patent Title (中): 用于背面接触或后门的子光刻开口
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Application No.: US12034875Application Date: 2008-02-21
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Publication No.: US07704811B2Publication Date: 2010-04-27
- Inventor: Theodore W Houston
- Applicant: Theodore W Houston
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/84
- IPC: H01L21/84
Abstract:
A low resistance buried back contact for SOI devices. A trench is etched in an insulating layer at minimum lithographic dimension, and sidewalls are deposited in the trench to decrease its width to sublithographic dimension. Conducting material is deposited in the trench, which serves as a low-resistance contact to the back side of the device. In another embodiment, the trench-fill material is separated from the device by an insulating layer, and serves as a back gate structure.
Public/Granted literature
- US20080166839A1 SUB-LITHOGRAPHICS OPENING FOR BACK CONTACT OR BACK GATE Public/Granted day:2008-07-10
Information query
IPC分类:
