Creating high voltage FETs with low voltage process

Invention Grant

US07704819B2 Creating high voltage FETs with low voltage process 有权

Title translation: 用低压工艺制造高压FET

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Patent Title: Creating high voltage FETs with low voltage process
Patent Title (中): 用低压工艺制造高压FET
Application No.: US12350102

Application Date: 2009-01-07
Publication No.: US07704819B2

Publication Date: 2010-04-27
Inventor: Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
Applicant: Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
Applicant Address: US TX Houston
Assignee: Hewlett-Packard Development Company, L.P.
Current Assignee: Hewlett-Packard Development Company, L.P.
Current Assignee Address: US TX Houston
Main IPC: H01L21/8238
IPC: H01L21/8238

Creating high voltage FETs with low voltage process

Abstract:

An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity− drift portions of the HV-second-conductivity FET.

Abstract(Chinese):

集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。第一导电阱形成在有源区的至少一部分中，其中第一导电阱形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。形成在有源区域的至少一部分中的沟道停止区域I s，其中沟道阻挡区域形成为具有作为HV-第二导电FET的第二导电漂移部分的能力。

Public/Granted literature

US20090130812A1 Creating High Voltage FETs with Low Voltage Process Public/Granted day:2009-05-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS