Invention Grant
US07704842B2 Lateral high-voltage transistor with vertically-extended voltage-equalized drift region
有权
具有垂直延伸的电压均衡漂移区域的横向高压晶体管
- Patent Title: Lateral high-voltage transistor with vertically-extended voltage-equalized drift region
- Patent Title (中): 具有垂直延伸的电压均衡漂移区域的横向高压晶体管
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Application No.: US12228210Application Date: 2008-08-11
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Publication No.: US07704842B2Publication Date: 2010-04-27
- Inventor: Richard A. Blanchard
- Applicant: Richard A. Blanchard
- Agent Robert Groover
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A lateral high-voltage device in which conductive trench plates are inserted across the voltage-withstand region, so that, in the on state, the current density vectors have less convergence. This can help reduce on-resistance.
Public/Granted literature
- US20080296679A1 Lateral high-voltage transistor with vertically-extended voltage-equalized drift region Public/Granted day:2008-12-04
Information query
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