Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12335861Application Date: 2008-12-16
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Publication No.: US07704857B2Publication Date: 2010-04-27
- Inventor: Daisuke Ito
- Applicant: Daisuke Ito
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2007-326455 20071218
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
After a semiconductor element is formed and before resin sealing is performed, a surface of a scribe line between the adjacent semiconductor elements of a semiconductor wafer is scraped thinly. A laser is irradiated on a broken layer of the surface of the scribe line thus scraped thinly to recrystallize the broken layer.
Public/Granted literature
- US20090170288A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-07-02
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