Invention Grant
- Patent Title: Electron beam microprocessing method
- Patent Title (中): 电子束微处理方法
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Application No.: US10558194Application Date: 2004-05-25
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Publication No.: US07704861B2Publication Date: 2010-04-27
- Inventor: Tadaaki Kaneko , Kiyoshi Sakaue , Naokatsu Sano
- Applicant: Tadaaki Kaneko , Kiyoshi Sakaue , Naokatsu Sano
- Applicant Address: FR Rueil-Malmaison
- Assignee: Riber SA
- Current Assignee: Riber SA
- Current Assignee Address: FR Rueil-Malmaison
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-147189 20030526
- International Application: PCT/JP2004/007452 WO 20040525
- International Announcement: WO2004/105111 WO 20041202
- Main IPC: H01L21/36
- IPC: H01L21/36
Abstract:
Onto a surface of an AlxGayIn1-x-yAszP1-z (0≦x, y, z≦1) layer including GaAs alone or an InP substrate, an electron beam controlled to an arbitrary electron beam diameter and current density is irradiated so as to selectively substitute or generate Ga2O3 for a natural oxide layer formed on the AlxGayIn1-x-yAszP1-z, layer surface, then the AlxGayIn1-x-yAszP1-z layer surface is dry-etched by a bromide in single atomic layer units, whereby the natural oxide layer other than the part substituted by the Ga2O3 and AlxGayIn1-x-yAszP1-z substrate are removed.
Public/Granted literature
- US20070099334A1 Electron beam microprocessing method Public/Granted day:2007-05-03
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