Invention Grant
- Patent Title: Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
- Patent Title (中): 通过顺序侧向固化方法在处理期间和之后的薄硅膜的表面平坦化
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Application No.: US11671917Application Date: 2007-02-06
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Publication No.: US07704862B2Publication Date: 2010-04-27
- Inventor: James S. Im , Robert S. Sposili , Mark A. Crowder
- Applicant: James S. Im , Robert S. Sposili , Mark A. Crowder
- Applicant Address: unknown City of New York
- Assignee: The Trustees of Columbia University
- Current Assignee: The Trustees of Columbia University
- Current Assignee Address: unknown City of New York
- Agency: Baker Botts LLP
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a sample stage for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage with respect to the laser pulses, and a computer for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage relative to the laser pulses.
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