Invention Grant
- Patent Title: Method of the application of a zinc sulfide buffer layer on a semiconductor substrate
- Patent Title (中): 在半导体衬底上施加硫化锌缓冲层的方法
-
Application No.: US11659920Application Date: 2005-08-11
-
Publication No.: US07704863B2Publication Date: 2010-04-27
- Inventor: Ahmed Ennaoui , Timo Kropp , Martha Christina Lux-Steiner
- Applicant: Ahmed Ennaoui , Timo Kropp , Martha Christina Lux-Steiner
- Applicant Address: DE Berlin
- Assignee: Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH
- Current Assignee: Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH
- Current Assignee Address: DE Berlin
- Agency: Darby & Darby
- Priority: DE102004040546 20040818
- International Application: PCT/DE2005/001431 WO 20050811
- International Announcement: WO2006/018013 WO 20060223
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Chemical bath deposition (CBD) has proved top be the most favorable method for application of a buffer layer to semiconductor substrates, for example, chalcopyrite thin-film solar cells, whereby previously cadmium sulphide (CdS) was deposited and as cadmium is a highly toxic heavy metal, alternatives have been required. According to the invention, the semiconductor substrate is dipped in a solution for approximately 10 minutes, produced by the dissolution of zinc sulphate (0.05-0.5 mol/l) and thiourea (0.2 to 1.5 mol/l) in distilled water at a temperature being held essentially constant throughout said period. For the first time, the ZnS layer permits comparable or higher efficiencies than conventionally only achieved with toxic cadmium compounds. The method is hence much more environmentally-friendly with the same result.
Public/Granted literature
- US20080274577A1 Method of the Application of a Zinc Sulfide Buffer Layer on a Semiconductor Substrate Public/Granted day:2008-11-06
Information query
IPC分类: