Fabrication of a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS)

Invention Grant

US07704868B2 Fabrication of a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS) 失效

Title translation: 从互补金属氧化物半导体（CMOS）制造微机电系统（MEMS）器件

Patent Title: Fabrication of a micro-electromechanical system (MEMS) device from a complementary metal oxide semiconductor (CMOS)
Patent Title (中): 从互补金属氧化物半导体（CMOS）制造微机电系统（MEMS）器件
Application No.: US11911478

Application Date: 2006-04-11
Publication No.: US07704868B2

Publication Date: 2010-04-27
Inventor: Huikai Xie , Khai D. T. Ngo
Applicant: Huikai Xie , Khai D. T. Ngo
Applicant Address: US FL Gainesville
Assignee: University of Florida Research Foundation, Inc.
Current Assignee: University of Florida Research Foundation, Inc.
Current Assignee Address: US FL Gainesville
Agency: Thomas, Kayden, Horstemeyer & Risley, LLP
International Application: PCT/US2006/013564 WO 20060411
International Announcement: WO2006/110782 WO 20061019
Main IPC: H01L21/44
IPC: H01L21/44

Abstract:

Methods of fabricating micro-electromechanical system devices from complementary metal oxide semiconductors (CMOS) are provided.

Abstract(Chinese):

提供了从互补金属氧化物半导体（CMOS）制造微机电系统器件的方法。

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的