Invention Grant
US07704879B2 Method of forming low-resistivity recessed features in copper metallization
有权
在铜金属化中形成低电阻率凹陷特征的方法
- Patent Title: Method of forming low-resistivity recessed features in copper metallization
- Patent Title (中): 在铜金属化中形成低电阻率凹陷特征的方法
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Application No.: US11864960Application Date: 2007-11-20
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Publication No.: US07704879B2Publication Date: 2010-04-27
- Inventor: Kenji Suzuki
- Applicant: Kenji Suzuki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A method is provided for forming low-resistivity recessed features containing a ruthenium (Ru) film integrated with bulk copper (Cu) metal. The method includes providing a patterned substrate containing a recessed feature, depositing a barrier film in the recessed feature in a barrier film deposition chamber, transferring the patterned substrate from the barrier film deposition chamber to a Ru metal deposition chamber, heat-treating the barrier film in the presence of a H2-containing gas in the Ru metal deposition chamber, and depositing a Ru metal film on the heat-treated barrier film. The method further includes, depositing a Cu seed layer on the Ru metal film and filling the recessed feature with bulk Cu metal. In other embodiments, the method further includes heat-treating the Ru metal film and the Cu seed layer prior to the bulk Cu metal filling.
Public/Granted literature
- US20090130843A1 METHOD OF FORMING LOW-RESISTIVITY RECESSED FEATURES IN COPPER METALLIZATION Public/Granted day:2009-05-21
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